| PART |
Description |
Maker |
| 5962-0323601QXA 5962-0323601QXC 5962-0323601QXX 59 |
128K x 32 SRAM: SMD. 15ns access time. Class Q. Lead finish hot solder dipped.
128K x 32 SRAM: SMD. 15ns access time. Class Q. Lead finish gold.
128K x 32 SRAM: SMD. 15ns access time. Class Q. Lead finish factory option.
128K x 32 SRAM: SMD. 15ns access time. Class V. Lead finish hot solder dipped.
128K x 32 SRAM: SMD. 15ns access time. Class V. Lead finish gold.
128K x 32 SRAM: SMD. 15ns access time. Class V. Lead finish factory option.
128K x 32 SRAM. 15ns access time. Lead finish hot solder dipped.
128K x 32 SRAM. 15ns access time. Lead finish factory option.
128K x 32 SRAM. 15ns access time. Lead finish gold.
|
Aeroflex Circuit Technology
|
| WME128K8-120DEI WME128K8-140DEI WME128K8-140DEIA W |
120ns; 5.5V power supply; 128K x 8 CMOS monolithic EEPROM, SMD 5962-96796
140ns; 5.5V power supply; 128K x 8 CMOS monolithic EEPROM, SMD 5962-96796
250ns; 5.5V power supply; 128K x 8 CMOS monolithic EEPROM, SMD 5962-96796
300ns; 5.5V power supply; 128K x 8 CMOS monolithic EEPROM, SMD 5962-96796
200ns; 5.5V power supply; 128K x 8 CMOS monolithic EEPROM, SMD 5962-96796
150ns; 5.5V power supply; 128K x 8 CMOS monolithic EEPROM, SMD 5962-96796
|
White Electronic Designs
|
| WF128K32N-120H1I5A WF128K32N-150H1I5 WF128K32N-50H |
120ns; 5V power supply; 128K x 32 flash module, SMD 5962-94716
150ns; 5V power supply; 128K x 32 flash module, SMD 5962-94716
60ns; 5V power supply; 128K x 32 flash module, SMD 5962-94716
70ns; 5V power supply; 128K x 32 flash module, SMD 5962-94716
90ns; 5V power supply; 128K x 32 flash module, SMD 5962-94716
|
White Electronic Designs
|
| AS7C31025A-20TJI AS7C1025A AS7C1025A-10JC AS7C1025 |
3.3V 128K x 8 CM0S SRAM (revolutionary pinout), 12ns access time
3.3V 128K x 8 CM0S SRAM (revolutionary pinout), 20ns access time
5V 128K x 8 CM0S SRAM (revolutionary pinout), 20ns access time
5V/3.3V 128K X 8 CMOS SRAM (Revolutionary pinout) 128K X 8 STANDARD SRAM, 10 ns, PDSO32
5V/3.3V 128K X 8 CMOS SRAM (Revolutionary pinout) 128K X 8 STANDARD SRAM, 20 ns, PDSO32
High Speed CMOS Logic Triple 3-Input NAND Gates 14-SOIC -55 to 125
Parallel-Load 8-Bit Shift Registers 16-VQFN -40 to 85
Parallel-Load 8-Bit Shift Registers 16-SO -40 to 85
High Speed CMOS Logic Quad 2-Input AND Gates 14-SOIC -55 to 125
High Speed CMOS Logic Quad 2-Input AND Gates 14-TSSOP -55 to 125
Parallel-Load 8-Bit Shift Registers 16-SOIC -40 to 85
Parallel-Load 8-Bit Shift Registers 16-TSSOP -40 to 85
5V 128K x 8 CM0S SRAM (revolutionary pinout), 12ns access time
5V 128K x 8 CM0S SRAM (revolutionary pinout), 15ns access time
3.3V 128K x 8 CM0S SRAM (revolutionary pinout), 15ns access time
|
Alliance Semiconductor ...
Alliance Semiconductor, Corp.
ALSC[Alliance Semiconductor Corporation]
|
| GS84032AB-180 GS84018AB-180 GS84036AB-180 GS84036A |
256K x 18, 128K x 32, 128K x 36 4Mb Sync Burst SRAMs 256 × 1828K的3228K的36 4Mb的同步突发静态存储器
256K x 18/ 128K x 32/ 128K x 36 4Mb Sync Burst SRAMs
Time-Delay Relay; Contacts:SPST-NC; Time Range:0.1 - 60 sec.; Mounting Type:Panel; Timing Function:Delay-On-Break; Supply Voltage:12VDC; Time Range Max:60s; Time Range Min:0.1s
|
ETC
Electronic Theatre Controls, Inc.
|
| EDI8F321024C15MZC EDI8F321024C20MZC EDI8F321024C25 |
15ns; 5V power supply; 1024K x 32 static RAM CMOS, high speed module
20ns; 5V power supply; 1024K x 32 static RAM CMOS, high speed module
25ns; 5V power supply; 1024K x 32 static RAM CMOS, high speed module
|
White Electronic Designs
|
| AS7C33128NTF32_36B AS7C33128NTF36B-80TQIN AS7C3312 |
3.3V 128K x 32/36 Flowthrough Synchronous SRAM with NTD 128K X 36 ZBT SRAM, 8 ns, PQFP100
3.3V 128K x 32/36 Flowthrough Synchronous SRAM with NTD 128K X 32 ZBT SRAM, 7.5 ns, PQFP100
Cap-Free, NMOS, 150mA Low Dropout Regulator with Reverse Current Protection 128K X 36 ZBT SRAM, 10 ns, PQFP100
3.3V 128K x 32/36 Flowthrough Synchronous SRAM with NTD 128K X 36 ZBT SRAM, 10 ns, PQFP100
3.3V 128K x 32/36 Flowthrough Synchronous SRAM with NTD 128K X 36 ZBT SRAM, 7.5 ns, PQFP100
3.3V 128K x 32/36 Flowthrough Synchronous SRAM with NTD 128K X 32 ZBT SRAM, 10 ns, PQFP100
LM194/LM394 Supermatch Pair; Package: TO-99; No of Pins: 6; Qty per Container: 500; Container: Box 128K X 36 ZBT SRAM, 7.5 ns, PQFP100
LM195/LM395 Ultra Reliable Power Transistors; Package: TO-220; No of Pins: 3; Qty per Container: 45; Container: Rail
LM392 Low Power Operational Amplifier/Voltage Comparator; Package: SOIC NARROW; No of Pins: 8; Qty per Container: 95; Container: Rail
3.3V 128K × 32/36 Flowthrough Synchronous SRAM with NTDTM
LM3916 Dot/Bar Display Driver; Package: MDIP; No of Pins: 18; Qty per Container: 20; Container: Rail
LM392 Low Power Operational Amplifier/Voltage Comparator; Package: MDIP; No of Pins: 8; Qty per Container: 40; Container: Rail
NTD? Sync SRAM - 3.3V
|
Alliance Semiconductor, Corp.
ALSC[Alliance Semiconductor Corporation]
|
| IS61LF12832-8.5TQI IS61LF12832-7.5TQI IS61LF12832- |
128K x 32, 128K x 36 synchronous flow-through static RAM
128K X 32 CACHE SRAM, 8.5 ns, PQFP100
|
INTEGRATED SILICON SOLUTION INC
|
| IDT71T024L200PZI IDT71T024 IDT71T024L150PZ IDT71T0 |
LOW POWER 2V CMOS SRAM 1 MEG (128K x 8-BIT) 128K X 8 STANDARD SRAM, 150 ns, PDSO32
|
Integrated Device Technology, Inc.
IDT[Integrated Device Technology]
|
| IDT71L024L70PZI IDT71L024 IDT71L024L100PZ IDT71L02 |
low power 3v cmos sram 1 meg (128k X 8-bit) 128K X 8 STANDARD SRAM, 100 ns, PDSO32
|
Integrated Device Technology, Inc.
IDT[Integrated Device Technology]
|
| IS61LV12816L |
128K x 16 HIGH-SPEED CMOS STATIC RAM WITH 3.3V SUPPLY
|
Integrated Silicon Solution, Inc
|
